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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1986, Volume 12, Issue 12, Pages 719–723 (Mi pjtf167)  
Heterojunction bipolar-transistors, obtained by low-temperature liquid-phase epitaxy

V. M. Andreev, A. B. Guchmazov, T. V. Dekal'chuk, Yu. M. Zadiranov, V. S. Kalinovskii, A. M. Koinova

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Full-text PDF (459 kB)
Received: 10.04.1986
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. M. Andreev, A. B. Guchmazov, T. V. Dekal'chuk, Yu. M. Zadiranov, V. S. Kalinovskii, A. M. Koinova, “Heterojunction bipolar-transistors, obtained by low-temperature liquid-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:12 (1986), 719–723
Citation in format AMSBIB
\Bibitem{AndGucDek86}
\by V.~M.~Andreev, A.~B.~Guchmazov, T.~V.~Dekal'chuk, Yu.~M.~Zadiranov, V.~S.~Kalinovskii, A.~M.~Koinova
\paper Heterojunction bipolar-transistors, obtained by low-temperature liquid-phase epitaxy
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1986
\vol 12
\issue 12
\pages 719--723
\mathnet{http://mi.mathnet.ru/pjtf167}
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