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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1984, Volume 10, Issue 21, Pages 1281–1286 (Mi pjtf1422)  
LAYERED STRUCTURE FORMATION IN THE ION-IMPLANTED GAAS UNDER THE SINGLE SUBNANOSECOND LASER-PULSE

E. N. Arutunov, A. N. Vasil'ev, Y. N. Kovalchuk, Yu. V. Pogorel'skii, I. I. Reshina, O. V. Smol'skii
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Document Type: Article
Language: Russian
Citation: E. N. Arutunov, A. N. Vasil'ev, Y. N. Kovalchuk, Yu. V. Pogorel'skii, I. I. Reshina, O. V. Smol'skii, “LAYERED STRUCTURE FORMATION IN THE ION-IMPLANTED GAAS UNDER THE SINGLE SUBNANOSECOND LASER-PULSE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984), 1281–1286
Citation in format AMSBIB
\Bibitem{AruVasPog84}
\by E.~N.~Arutunov, A.~N.~Vasil'ev, Y.~N.~Kovalchuk, Yu.~V.~Pogorel'skii, I.~I.~Reshina, O.~V.~Smol'skii
\paper LAYERED STRUCTURE FORMATION IN THE ION-IMPLANTED GAAS UNDER THE SINGLE
SUBNANOSECOND LASER-PULSE
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1984
\vol 10
\issue 21
\pages 1281--1286
\mathnet{http://mi.mathnet.ru/pjtf1422}
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