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Fizika i Tekhnika Poluprovodnikov, 1987, Volume 21, Issue 10, Pages 1907–1909 (Mi phts928)  
Short Notes

Photosensitivity and Conduction of Amorphous Silicon Doped by Isovalent Germanium Impurity

A. F. Khokhlov, A. V. Ershov, A. I. Mashin, Yu. A. Mordvinova
Full-text PDF (393 kB)
Document Type: Article
Language: Russian
Citation: A. F. Khokhlov, A. V. Ershov, A. I. Mashin, Yu. A. Mordvinova, “Photosensitivity and Conduction of Amorphous Silicon Doped by Isovalent Germanium Impurity”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1907–1909
Citation in format AMSBIB
\Bibitem{1}
\by A.~F.~Khokhlov, A.~V.~Ershov, A.~I.~Mashin, Yu.~A.~Mordvinova
\paper Photosensitivity and Conduction of Amorphous Silicon Doped by Isovalent Germanium Impurity
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1987
\vol 21
\issue 10
\pages 1907--1909
\mathnet{http://mi.mathnet.ru/phts928}
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