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Fizika i Tekhnika Poluprovodnikov, 1987, Volume 21, Issue 10, Pages 1901–1904 (Mi phts926)  
Short Notes

Electrophysical and Photoelectric Characteristics of $p{-}n$ Junctions Produced by Beryllium Implantation into GaAs$_{1-x}$P$_{x}$

G. I. Koltsov, E. A. Ladygin, S. Yu. Yurchuk, F. A. Zaitov
Full-text PDF (622 kB)
Document Type: Article
Language: Russian
Citation: G. I. Koltsov, E. A. Ladygin, S. Yu. Yurchuk, F. A. Zaitov, “Electrophysical and Photoelectric Characteristics of $p{-}n$ Junctions Produced by Beryllium Implantation into GaAs$_{1-x}$P$_{x}$”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1901–1904
Citation in format AMSBIB
\Bibitem{Zai87}
\by G.~I.~Koltsov, E.~A.~Ladygin, S.~Yu.~Yurchuk, F.~A.~Zaitov
\paper Electrophysical and Photoelectric Characteristics of $p{-}n$ Junctions Produced by Beryllium Implantation into GaAs$_{1-x}$P$_{x}$
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1987
\vol 21
\issue 10
\pages 1901--1904
\mathnet{http://mi.mathnet.ru/phts926}
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