Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 1987, Volume 21, Issue 10, Pages 1863–1867 (Mi phts918)  
Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode

F. F. Komarov, E. V. Kotov, A. P. Novikov, S. A. Petrov, T. T. Samoilyuk
Full-text PDF (5635 kB)
Document Type: Article
Language: Russian
Citation: F. F. Komarov, E. V. Kotov, A. P. Novikov, S. A. Petrov, T. T. Samoilyuk, “Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1863–1867
Citation in format AMSBIB
\Bibitem{KomNov87}
\by F.~F.~Komarov, E.~V.~Kotov, A.~P.~Novikov, S.~A.~Petrov, T.~T.~Samoilyuk
\paper Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1987
\vol 21
\issue 10
\pages 1863--1867
\mathnet{http://mi.mathnet.ru/phts918}
Linking options:
  • https://www.mathnet.ru/eng/phts918
  • https://www.mathnet.ru/eng/phts/v21/i10/p1863
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024