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Fizika i Tekhnika Poluprovodnikov, 1987, Volume 21, Issue 10, Pages 1863–1867 (Mi phts918)  
Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode

F. F. Komarov, E. V. Kotov, A. P. Novikov, S. A. Petrov, T. T. Samoilyuk
Full-text PDF (5635 kB)
Document Type: Article
Language: Russian
Citation: F. F. Komarov, E. V. Kotov, A. P. Novikov, S. A. Petrov, T. T. Samoilyuk, “Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1863–1867
Citation in format AMSBIB
\Bibitem{KomNov87}
\by F.~F.~Komarov, E.~V.~Kotov, A.~P.~Novikov, S.~A.~Petrov, T.~T.~Samoilyuk
\paper Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1987
\vol 21
\issue 10
\pages 1863--1867
\mathnet{http://mi.mathnet.ru/phts918}
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