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Fizika i Tekhnika Poluprovodnikov, 1987, Volume 21, Issue 10, Pages 1837–1841 (Mi phts914)  
Study of Electronic Structure of Isoelectronic Impurities in Silicon. C, Ge Atoms and Their Complexes with Vacancies

A. M. Grekhov, V. M. Gunko, V. I. Shakhovtsov
Full-text PDF (570 kB)
Document Type: Article
Language: Russian
Citation: A. M. Grekhov, V. M. Gunko, V. I. Shakhovtsov, “Study of Electronic Structure of Isoelectronic Impurities in Silicon. C, Ge Atoms and Their Complexes with Vacancies”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1837–1841
Citation in format AMSBIB
\Bibitem{GreGunSha87}
\by A.~M.~Grekhov, V.~M.~Gunko, V.~I.~Shakhovtsov
\paper Study of Electronic Structure of Isoelectronic Impurities in Silicon. C, Ge Atoms and Their Complexes with Vacancies
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1987
\vol 21
\issue 10
\pages 1837--1841
\mathnet{http://mi.mathnet.ru/phts914}
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