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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Page 1405
(Mi phts6704)
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NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Spin Related Phenomena in Nanostructures
Floquet engineering of structures based on gapless semiconductors
O. V. Kibisa, M. V. Boevb, V. M. Kovalevc, R. E. Sinitskyia, I. A. Shelykhd a Department of Applied and Theoretical Physics, Novosibirsk State Technical University, 630073 Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
c Science Institute, University of Iceland, Dunhagi 3, IS-107, Reykjavik, Iceland
d ITMO University, 197101 St. Petersburg, Russia
Abstract:
Applying the conventional Floquet theory of periodically driven quantum systems, we developed the theory of optical control of structures based on gapless semiconductors. It is demonstrated that electronic properties of the structures crucially depends on irradiation. Particularly, irradiation by a circularly polarized electromagnetic wave lifts spin degeneracy of electronic bands and induces surface electronic states. Thus, a high-frequency off-resonant electromagnetic field can serve as an effective tool to control electronic characteristics of the structures and be potentially exploited in optoelectronic applications of them.
Keywords:
Floquet systems, gapless semiconductors.
Received: 23.06.2020 Revised: 23.07.2020 Accepted: 27.07.2020
Citation:
O. V. Kibis, M. V. Boev, V. M. Kovalev, R. E. Sinitskyi, I. A. Shelykh, “Floquet engineering of structures based on gapless semiconductors”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1405; Semiconductors, 54:12 (2020), 1734–1736
Linking options:
https://www.mathnet.ru/eng/phts6704 https://www.mathnet.ru/eng/phts/v54/i12/p1405
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