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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Page 1391 (Mi phts6690)  
This article is cited in 4 scientific papers (total in 4 papers)

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Nanostructure Characterization

Spatial and hyperfine characteristics of SiV$^-$ and SiV$^0$ color centers in diamond: DFT simulation

A. P. Nizovtsevab, S. Ya. Kilina, A. L. Pushkarchukcd, S. A. Kutend, N. A. Poklonskie, D. Michelsf, D. Lyakhovf, F. Jelezkog

a Institute of Physics, National Academy of Sciences of Belarus, 220072 Minsk, Belarus
b National Research Nuclear University "MEPhI", 115409 Moscow, Russia
c Institute of Physical-Organic Chemistry, Nat. Acad. Sci. of Belarus, 220072 Minsk, Belarus
d Institute for Nuclear Problems, Belarusian State University, 220030 Minsk, Belarus
e Physics Department, Belarusian State University, 220030 Minsk, Belarus
f Computer, Electrical and Mathematical Science and Engineering Division, 4700 King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
g Institute for Quantum Optics, Ulm University, 89069 Ulm, Germany
Full-text PDF (32 kB) Citations (4)
Abstract: One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of “fast” qubits, while nuclear spins of nearby $^{13}$C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged “silicon-vacancy” (SiV$^-$) and neutral (SiV$^0$) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C$_{128}$[SiV]H$_{98}$ along with their comparison with available experimental data.
Keywords: silicon-vacancy (SiV) color center, diamond, $^{13}$C nuclear spin, hyperfine interaction, density functional theory.
Funding agency Grant number
Belarusian Republican Foundation for Fundamental Research ФМС-036
Ministry of Education and Science of the Russian Federation
This work has been supported in part by Belarusian Republican Foundation for Fundamental Research, grants no. FMS-036, and by National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute).
Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020
English version:
Semiconductors, 2020, Volume 54, Issue 12, Pages 1685–1688
DOI: https://doi.org/10.1134/S1063782620120271
Document Type: Article
Language: English
Citation: A. P. Nizovtsev, S. Ya. Kilin, A. L. Pushkarchuk, S. A. Kuten, N. A. Poklonski, D. Michels, D. Lyakhov, F. Jelezko, “Spatial and hyperfine characteristics of SiV$^-$ and SiV$^0$ color centers in diamond: DFT simulation”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1391; Semiconductors, 54:12 (2020), 1685–1688
Citation in format AMSBIB
\Bibitem{NizKilPus20}
\by A.~P.~Nizovtsev, S.~Ya.~Kilin, A.~L.~Pushkarchuk, S.~A.~Kuten, N.~A.~Poklonski, D.~Michels, D.~Lyakhov, F.~Jelezko
\paper Spatial and hyperfine characteristics of SiV$^-$ and SiV$^0$ color centers in diamond: DFT simulation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 12
\pages 1391
\mathnet{http://mi.mathnet.ru/phts6690}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 12
\pages 1685--1688
\crossref{https://doi.org/10.1134/S1063782620120271}
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