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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Page 1383 (Mi phts6682)  
NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Graphene

Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate

S. P. Lebedeva, I. A. Eliseyeva, V. N. Panteleeva, P. A. Dementeva, V. V. Shnitova, M. K. Rabchinskiia, D. A. Smirnovb, A. V. Zubovc, A. A. Lebedevad

a Ioffe Institute, 194021 St. Petersburg, Russia
b Institut für Festkorper und Materialphysik, Technische Universitat Dresden, Dresden, Germany
c St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University), 197101 St. Petersburg, Russia
d St. Petersburg State Electrotechnical University LETI, 197376 St. Petersburg, Russia
Full-text PDF (29 kB)
Abstract: The structural and some other characteristics of quasi-freestanding single-layer graphene obtained by annealing of the buffer layer in the flow of hydrogen are studied in comparison with those of conventional epitaxial graphene. The high structural quality and good lateral uniformity of the thus-obtained graphene film are checked and confirmed by the use of such techniques as Raman spectroscopy, atomic force, and Kelvin probe force microscopies. The confirmation of its single-layer and freestanding character is obtained via the analysis of respective data of $X$-ray photoelectron spectroscopy.
Keywords: silicon carbide, graphene, KPFM, Raman spectroscopy, XPS.
Funding agency Grant number
Russian Foundation for Basic Research 18-02-00498
The authors thank Helmholtz-Zentrum Berlin for the allocation of synchrotron radiation beamtime and the German-Russian Laboratory at BESSY II for the support of our XPS measurements. S.P. Lebedev and I.A. Eliseyev acknowledge the support from RFBR (project 18-02-00498).
Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020
English version:
Semiconductors, 2020, Volume 54, Issue 12, Pages 1657–1660
DOI: https://doi.org/10.1134/S1063782620120179
Document Type: Article
Language: English
Citation: S. P. Lebedev, I. A. Eliseyev, V. N. Panteleev, P. A. Dementev, V. V. Shnitov, M. K. Rabchinskii, D. A. Smirnov, A. V. Zubov, A. A. Lebedev, “Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1383; Semiconductors, 54:12 (2020), 1657–1660
Citation in format AMSBIB
\Bibitem{LebEliPan20}
\by S.~P.~Lebedev, I.~A.~Eliseyev, V.~N.~Panteleev, P.~A.~Dementev, V.~V.~Shnitov, M.~K.~Rabchinskii, D.~A.~Smirnov, A.~V.~Zubov, A.~A.~Lebedev
\paper Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 12
\pages 1383
\mathnet{http://mi.mathnet.ru/phts6682}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 12
\pages 1657--1660
\crossref{https://doi.org/10.1134/S1063782620120179}
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