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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Page 1374
(Mi phts6681)
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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor physics
Analytical drain current modeling and simulation of triple material gate-all-around heterojunction TFETs considering depletion regions
C. Usha, P. Vimala Department of Electronics and Communication, Dayananda Sagar College of Engineering,
Bangalore, Karnataka, India
Abstract:
This paper deals with electrostatic behavior of triple-material gate-all-around hetero-junction tunneling field-effect transistors (TMGAA-HJTFET) device. The model is advantageous in apprehending a comparative study with the single-material gate-all-around hetero-junction tunneling field-effect transistors (SMGAA-HJTFET) in terms of surface potential, electric field, drain current, transconductance, and threshold voltage. The surface-potential distribution in partition regions along the channel is solved by using two-dimensional Poisson’s equation. By using the drift and diffusion current, drain current is derived, and $I_{\operatorname{On}}/I_{\operatorname{Off}}$ ratio of 10$^{11}$ is gained from analytical modeling and TCAD simulation. Transconductance and threshold voltage are derived from the tunneling current. The proposed model results are validated by the ATLAS TCAD simulation tool.
Keywords:
drain current, surface potential, electric field, TFETs, TCAD simulation.
Received: 11.05.2020 Revised: 07.07.2020 Accepted: 13.08.2020
Citation:
C. Usha, P. Vimala, “Analytical drain current modeling and simulation of triple material gate-all-around heterojunction TFETs considering depletion regions”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1374; Semiconductors, 54:12 (2020), 1634–1640
Linking options:
https://www.mathnet.ru/eng/phts6681 https://www.mathnet.ru/eng/phts/v54/i12/p1374
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