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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 11, Page 1261 (Mi phts6677)  
NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Excitons in Nanostructures

Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances

A. S. Kurdyubova, B. F. Gribakina, A. V. Mikhailova, A. V. Trifonova, Yu. P. Efimovb, S. A. Eliseevb, V. A. Lovtsyusb, I. V. Ignatieva

a Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Petrodvorets, Russia
b Resourse Center "Nanohotonics", St. Petersburg State University, 198504 St. Petersburg, Petrodvorets, Russia
Full-text PDF (26 kB)
Abstract: The energy spectrum of the exciton and carrier states in a shallow GaAs/AlGaAs quantum well is experimentally studied by means of the spectroscopy of the nonradiative broadening of exciton resonances and the spectroscopy of the photoluminescence excitation. The observed peculiarities of the spectra are treated using the numerical solution of the one-dimensional Schrödinger equation for free carriers and three-dimensional equation for excitons in the quantum well. The conduction and valence band offsets in the shallow GaAs quantum well are determined.
Keywords: exciton spectroscopy; GaAs/AlGaAs quantum well; nonradiative broadening.
Funding agency Grant number
Russian Foundation for Basic Research 19-02-00576а
18-32-00516
20-32-70131
Saint Petersburg State University 51125686
This work is supported by the Russian Foundation for Basic Research, grants nos. 19-02-00576a, 18-32-00516, and 20-32-70131. The authors acknowledge Saint-Petersburg State University for research Grant no. 51125686.
Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020
English version:
Semiconductors, 2020, Volume 54, Issue 11, Pages 1514–1517
DOI: https://doi.org/10.1134/S1063782620110172
Document Type: Article
Language: English
Citation: A. S. Kurdyubov, B. F. Gribakin, A. V. Mikhailov, A. V. Trifonov, Yu. P. Efimov, S. A. Eliseev, V. A. Lovtsyus, I. V. Ignatiev, “Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1261; Semiconductors, 54:11 (2020), 1514–1517
Citation in format AMSBIB
\Bibitem{KurGriMik20}
\by A.~S.~Kurdyubov, B.~F.~Gribakin, A.~V.~Mikhailov, A.~V.~Trifonov, Yu.~P.~Efimov, S.~A.~Eliseev, V.~A.~Lovtsyus, I.~V.~Ignatiev
\paper Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 11
\pages 1261
\mathnet{http://mi.mathnet.ru/phts6677}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 11
\pages 1514--1517
\crossref{https://doi.org/10.1134/S1063782620110172}
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