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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 11, Page 1258
(Mi phts6674)
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NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Excitons in Nanostructures
Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells
E. S. Khramtsov, B. F. Gribakin, A. V. Trifonov, I. V. Ignatiev Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Petrodvorets, Russia
Abstract:
In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 $\mu$eV for an exciton density of 1/$\mu$m$^2$.
Keywords:
quantum wells, exciton, exchange interaction.
Received: 23.06.2020 Revised: 23.07.2020 Accepted: 27.07.2020
Citation:
E. S. Khramtsov, B. F. Gribakin, A. V. Trifonov, I. V. Ignatiev, “Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1258; Semiconductors, 54:11 (2020), 1503–1505
Linking options:
https://www.mathnet.ru/eng/phts6674 https://www.mathnet.ru/eng/phts/v54/i11/p1258
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