Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 11, Page 1258 (Mi phts6674)  
NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Excitons in Nanostructures

Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells

E. S. Khramtsov, B. F. Gribakin, A. V. Trifonov, I. V. Ignatiev

Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Petrodvorets, Russia
Full-text PDF (25 kB)
Abstract: In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 $\mu$eV for an exciton density of 1/$\mu$m$^2$.
Keywords: quantum wells, exciton, exchange interaction.
Funding agency Grant number
Russian Science Foundation 19-72-20039
This work is supported by the Russian Science Foundation, grant no. 19-72-20039. The calculations were carried out using the facilities of the SPbU Resource Center Computational Center of SPbU.
Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020
English version:
Semiconductors, 2020, Volume 54, Issue 11, Pages 1503–1505
DOI: https://doi.org/10.1134/S1063782620110135
Document Type: Article
Language: English
Citation: E. S. Khramtsov, B. F. Gribakin, A. V. Trifonov, I. V. Ignatiev, “Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1258; Semiconductors, 54:11 (2020), 1503–1505
Citation in format AMSBIB
\Bibitem{KhrGriTri20}
\by E.~S.~Khramtsov, B.~F.~Gribakin, A.~V.~Trifonov, I.~V.~Ignatiev
\paper Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 11
\pages 1258
\mathnet{http://mi.mathnet.ru/phts6674}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 11
\pages 1503--1505
\crossref{https://doi.org/10.1134/S1063782620110135}
Linking options:
  • https://www.mathnet.ru/eng/phts6674
  • https://www.mathnet.ru/eng/phts/v54/i11/p1258
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:41
    Full-text PDF :14
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024