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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 10, Page 1097
(Mi phts6665)
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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor physics
Analysis of the temperature dependence of diode ideality factor in InGaN-based UV-a light-emitting diode
P. Dalapati, N. B. Manik, A. N. Basu Condensed Matter Physics Research Centre, Department of Physics, Jadavpur University, Kolkata, 700032 India
Abstract:
The temperature dependence of diode ideality factor in InGaN-based UV-A light-emitting diode has been investigated using the current–voltage characteristics at different temperatures. The obtained values of diode ideality factor are found to increase from 2.252 to 7.79 due to cooling down the device from 350 to 77 K. The evaluated values of diode ideality factors (even at high temperature) are greater than the expected values lying between unity to two. An attempt has been made to elucidate such greater value of diode ideality factor by existing theories as well as its effect on the diode characteristics.
Keywords:
InGaN UV LED, diode ideality factor, tunnelling current, current crowding effect.
Received: 18.05.2020 Revised: 18.05.2020 Accepted: 09.06.2020
Citation:
P. Dalapati, N. B. Manik, A. N. Basu, “Analysis of the temperature dependence of diode ideality factor in InGaN-based UV-a light-emitting diode”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1097; Semiconductors, 54:10 (2020), 1284–1289
Linking options:
https://www.mathnet.ru/eng/phts6665 https://www.mathnet.ru/eng/phts/v54/i10/p1097
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