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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 8, Page 779
(Mi phts6657)
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Manufacturing, processing, testing of materials and structures
The effect of the crystalline structure transformation in VO$_2$/glass by inserting TiO$_2$ buffer layer and its application in smart windows
C. Liu, S. Wang, R. Li, J. Liu, M. Huang Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics,
Henan University, Kaifeng, 475004, China
Abstract:
Vanadium dioxide (VO$_2$) undergoes a reversible metal–insulator transition at low temperature, which has wide range of applications in smart windows and infrared detectors. However, the preparation of VO$_2$ films with controllable phase on glass substrate is still limited. In this paper, it is shown that $B$-phase can be transformed into $M$-phase with monoclinic structure by inserting TiO$_2$ buffer layer on glass substrate at low temperature of 400$^\circ$ C. This crystalline transformation might be attributed to that Ti atoms diffuse and form oxygen deficient environments. Different thicknesses of buffer layers have different effect on characteristic of VO$_2$ film. With 50 nm TiO$_2$ buffer layer, the VO$_2$/TiO$_2$/glass film showed an abrupt resistance change with more than 2.5-order of magnitude across metal–insulator transition, and the visible-light transmittance value is as high as 55.5% with the solar modulation capability up to 8.6%. The current results are very important for the application in smart windows.
Keywords:
vanadium dioxide, TiO$_2$ buffer layer, metal–insulator transition, solar modulation capability.
Received: 08.04.2020 Revised: 15.04.2020 Accepted: 15.04.2020
Citation:
C. Liu, S. Wang, R. Li, J. Liu, M. Huang, “The effect of the crystalline structure transformation in VO$_2$/glass by inserting TiO$_2$ buffer layer and its application in smart windows”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 779; Semiconductors, 54:8 (2020), 929–935
Linking options:
https://www.mathnet.ru/eng/phts6657 https://www.mathnet.ru/eng/phts/v54/i8/p779
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Abstract page: | 43 | Full-text PDF : | 18 |
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