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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 8, Page 830 (Mi phts6652)  

This article is cited in 2 scientific papers (total in 2 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Effective mass and $g$-factor of two-dimensional HgTe $\Gamma_8$-band electrons: Shubnikov–de Haas oscillations

V. N. Neverova, A. S. Bogolubskiia, S. V. Gudinaa, S. M. Podgornykhab, K. V. Turutkina, M. R. Popova, N. G. Shelushininaa, M. V. Yakunina, N. N. Mikhailovc, S. A. Dvoretskyc

a Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Ekaterinburg, Russia
b Ural Federal University, 620002 Ekaterinburg, Russia
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (30 kB) Citations (2)
Abstract: We present a study of Shubnikov-de Haas (SdH) oscillations at temperatures of (2.2–10) K in magnetic fields up to 2.5 T in the HgCdTe/HgTe/HgCdTe heterostructure for a wide (20.3 nm) HgTe quantum well with an inverted energy band structure. The analysis of the temperature dependence of SdH amplitude in weak fields, in a region of doubly degenerate magnetoresistance peaks, led us to the value of effective electron mass $m_c/m_0$ = (0.022 $\pm$ 0.002) which is about half the theoretical estimates. But in a region of higher magnetic fields, for nondegenerate magnetoresistance peaks, we confidently have $m_c/m_0$ = (0.034 $\pm$ 0.003) in good agreement both with the theoretical estimation and with our experimental results on the analysis of activation transport under quantum Hall effect regime. The reasons for this discrepancy are discussed.
Keywords: quantum wells, mercury telluride, Shubnikov–de Haas oscillations, effective mass of charge carriers, quantum Hall effect.
Funding agency Grant number
Russian Foundation for Basic Research 18-02-00172
18-32-00382
The research was carried out within the state assignment of Russian Ministry of Science and High education, theme “Electron” and “Function”, supported in part by Russian Foundation on Basic Research, projects Nos. 18-02-00172 (samples), 18-32-00382 (experiment).
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 8, Pages 982–990
DOI: https://doi.org/10.1134/S1063782620080163
Bibliographic databases:
Document Type: Article
Language: English
Citation: V. N. Neverov, A. S. Bogolubskii, S. V. Gudina, S. M. Podgornykh, K. V. Turutkin, M. R. Popov, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky, “Effective mass and $g$-factor of two-dimensional HgTe $\Gamma_8$-band electrons: Shubnikov–de Haas oscillations”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 830; Semiconductors, 54:8 (2020), 982–990
Citation in format AMSBIB
\Bibitem{NevBogGud20}
\by V.~N.~Neverov, A.~S.~Bogolubskii, S.~V.~Gudina, S.~M.~Podgornykh, K.~V.~Turutkin, M.~R.~Popov, N.~G.~Shelushinina, M.~V.~Yakunin, N.~N.~Mikhailov, S.~A.~Dvoretsky
\paper Effective mass and $g$-factor of two-dimensional HgTe $\Gamma_8$-band electrons: Shubnikov--de Haas oscillations
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 8
\pages 830
\mathnet{http://mi.mathnet.ru/phts6652}
\elib{https://elibrary.ru/item.asp?id=47283700}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 8
\pages 982--990
\crossref{https://doi.org/10.1134/S1063782620080163}
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  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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