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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 7, Page 691 (Mi phts6651)  

This article is cited in 3 scientific papers (total in 3 papers)

Manufacturing, processing, testing of materials and structures

GaAs semiconductor passivated by (NH$_4$)$_2$S$_x$ : analysis of different passivation methods using electrical characteristics and XPS measurements

H. Mahmoodniaa, A. Salehia, V. R. Mastelarob

a Department of Electrical and Computer Engineering, K.N. Toosi University of Technology, Tehran, 1969764499 Iran
b Institute of Physics of São Carlos (IFSC), University of Sao Paulo, Sao Carlos, Brazil
Full-text PDF (32 kB) Citations (3)
Abstract: Some of the III–V semiconductor used in various devices suffer from the surface high density of states limiting their application. This study compares and evaluates five different ammonium sulfide passivation methods on GaAs surface with the aim to enhance the electrical characteristics of Au|$n$-GaAs Schottky junction. Wet chemical passivation of the $n$-GaAs surface was carried out by dipping the samples in saturated ammonium sulfide solutions at various temperatures and for various times. We also used acidic cleaning to improve the device performance. Our investigation shows a noticeable improvement in the electrical characteristics of the device reported here using acidic cleaning and ammonium sulfide passivation methods. A 23% increase in Schottky barrier height is found, which is much higher than that reported in the literature. Further, we measured a reduction of around three orders of magnitudes in saturation current as well as improvement in ideality factor to 1.23 for the best conditions of surface acidic cleaning and passivation. $X$-ray photoelectron spectroscopy study revealed a suppression of oxide layer by introduction of sulfide species in GaAs surface after the passivation. The lowest concentration of oxygen was found on the surface of the sample passivated under the optimum condition.
Keywords: GaAs surface, acidic cleaning, (NH$_4$)$_2$S$_x$ passivation, electrical characteristics, X-ray photoelectron, spectroscopy.
Received: 03.02.2020
Revised: 21.02.2020
Accepted: 21.02.2020
English version:
Semiconductors, 2020, Volume 54, Issue 7, Pages 817–826
DOI: https://doi.org/10.1134/S106378262007009X
Document Type: Article
Language: English
Citation: H. Mahmoodnia, A. Salehi, V. R. Mastelaro, “GaAs semiconductor passivated by (NH$_4$)$_2$S$_x$ : analysis of different passivation methods using electrical characteristics and XPS measurements”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 691; Semiconductors, 54:7 (2020), 817–826
Citation in format AMSBIB
\Bibitem{MahSalMas20}
\by H.~Mahmoodnia, A.~Salehi, V.~R.~Mastelaro
\paper GaAs semiconductor passivated by (NH$_4$)$_2$S$_x$ : analysis of different passivation methods using electrical characteristics and XPS measurements
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 7
\pages 691
\mathnet{http://mi.mathnet.ru/phts6651}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 7
\pages 817--826
\crossref{https://doi.org/10.1134/S106378262007009X}
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  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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