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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 6, Page 585
(Mi phts6648)
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This article is cited in 1 scientific paper (total in 1 paper)
Manufacturing, processing, testing of materials and structures
Impact of carrier gas on the GaN layers properties grown on (001) and (11$n$) GaAs substrates by AP-MOVPE: comparative study
J. Laifiab, A. Bchetniacb a Physics Department, College of Science, Jouf University,
P.O. Box 2014, Sakaka, Saudi Arabia
b Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir 5019, Université de Monastir, Tunisia
c Department of Physics, College of Science, Qassim University,
Saudi Arabia
Abstract:
The impact of carrier gas on the GaN layers properties grown by atmospheric pressure metal-organic vapor-phase epitaxy (AP-MOVPE) on (001) and (11$n$) GaAs substrates were investigated. The Arrhenius plots of growth rate deduced from laser reflectometry measurements give an activation energy of $E_{\mathrm{a}1}$ = 0.045 eV when the H$_2$ was used as the carrier gas. In the case of using N$_2$ as the carrier gas, the results give $E_{\mathrm{a}2}$ = 0.081 eV as a value of activation energy, which is approximately 2 times greater than $E_{\mathrm{a}1}$. Scanning electron microscopy results show that when N$_2$ is used, the resulting material quality is low, but the use of H$_2$ is successful to prevent the cracking of GaN layers and results in improvement of crystalline properties. From the $X$-ray diffraction result, we conclude that both (001) and (113) GaAs substrate orientations as well as the use of H$_2$ as the carrier gas favors the GaN growth with cubic structure, whereas the GaN hexagonal structure is favored for growth on (112) and (111) GaAs substrates orientations with N$_2$. Cathodoluminescence measurements show that a mechanism of phase transformation occurs when the growth temperature rise from 800 to 900$^\circ$C.
Keywords:
cubic GaN, hexagonal GaN, $(hkl)$ GaAs, carrier gas.
Received: 01.02.2020 Revised: 10.02.2020 Accepted: 10.02.2020
Citation:
J. Laifi, A. Bchetnia, “Impact of carrier gas on the GaN layers properties grown on (001) and (11$n$) GaAs substrates by AP-MOVPE: comparative study”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 585; Semiconductors, 54:6 (2020), 691–697
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https://www.mathnet.ru/eng/phts6648 https://www.mathnet.ru/eng/phts/v54/i6/p585
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