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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 5, Page 460 (Mi phts6644)  
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Effects of 1-MeV electron irradiation on the photoluminescence of GaInNAs|GaAs single quantum well structure

M. Sailaia, A. Aierkena, L. Qiqia, M. Heinia, X. Zhaoa, J. Mob, G. Jieb, R. Haob, Z. Yub, G. Qia

a Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, P. R. China
b School of Energy and Environment, Yunnan Normal University, Kunming, P. R. China
Full-text PDF (31 kB) Citations (2)
Abstract: Minimizing the impact of radiation-induced degradation in dilute nitride based optoelectronic devices is crucial in its applications. The effects of 1-MeV electron irradiation (of 1 $\cdot$ 10$^{14}$–1 $\cdot$ 10$^{16}$ e/cm$^2$ range) on undoped GaInNAs|GaAs single quantum-well (QW) structure has been studied by low-temperature photoluminescence (PL). PL spectra of GaInNAs|GaAs QW are measured before and after electron irradiation. The results show a slight enhancement of the PL intensity in relatively low electron fluence, and then subsequent deterioration of PL with the increase of cumulative electron fluences. The enhancement in PL intensity at low electron doses is explained by recombination-enhanced defect reaction model, and the degradation at high electron doses is explained by irradiation-induced defects in the lattice.
Keywords: dilute nitride, quantum well, electron irradiation, PL, defect.
Funding agency Grant number
Natural Science Foundation of China 61534008
Director Foundation of Xinjiang Technical Institute of Phys. and Chem. CAS Y52H121101
National Natural Science Foundation of China 61774130
11474248
PhD Programs Foundation of Ministry of Education of China 20105303120002
West Light Foundation of the Chinese Academy of Sciences 2017-XBQNXZ-B-004
Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory ZHD201705
This work was supported by a key project of Natural Science Foundation of China (grant no. 61534008), Director Foundation of Xinjiang Technical Institute of Phys. and Chem. CAS (no. Y52H121101), National Natural Science Foundation of China (grant nos. 61774130, 11474248), PhD Programs Foundation of Ministry of Education of China (no. 20105303120002), West Light Foundation of The Chinese Academy of Sciences (grant no. 2017-XBQNXZ-B-004), and The Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (grant no. ZHD201705).
Received: 06.12.2019
Revised: 30.12.2019
Accepted: 05.01.2020
English version:
Semiconductors, 2020, Volume 54, Issue 5, Pages 554–557
DOI: https://doi.org/10.1134/S1063782620050103
Document Type: Article
Language: English
Citation: M. Sailai, A. Aierken, L. Qiqi, M. Heini, X. Zhao, J. Mo, G. Jie, R. Hao, Z. Yu, G. Qi, “Effects of 1-MeV electron irradiation on the photoluminescence of GaInNAs|GaAs single quantum well structure”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 460; Semiconductors, 54:5 (2020), 554–557
Citation in format AMSBIB
\Bibitem{SaiAieQiq20}
\by M.~Sailai, A.~Aierken, L.~Qiqi, M.~Heini, X.~Zhao, J.~Mo, G.~Jie, R.~Hao, Z.~Yu, G.~Qi
\paper Effects of 1-MeV electron irradiation on the photoluminescence of GaInNAs|GaAs single quantum well structure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 5
\pages 460
\mathnet{http://mi.mathnet.ru/phts6644}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 5
\pages 554--557
\crossref{https://doi.org/10.1134/S1063782620050103}
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