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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 7, Page 585 (Mi phts6618)  

This article is cited in 10 scientific papers (total in 10 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Structural and electronic properties of rippled graphene with different orientations of Stone–Wales defects: first-principles study

J. A. Tallaa, E. A. Almahmoudb, K. Al-Khaza'leha, H. Abu-Farsakhc

a Department of Physics, Al al-Bayt University, Al-Mafraq-130040, Jordan
b Department of Physical Sciences, Jordan University of Science and Technology, P.O. Box 3030, Irbid-22110, Jordan
c Department of General Sciences, Prince Sultan University, Riyadh-11586, Saudi Arabia
Full-text PDF (28 kB) Citations (10)
Abstract: In this work, we used density functional theory to investigate the structural and electronic properties of rippled pristine graphene and graphene with two orientations of Stone–Wales defects. The formation of periodic ripples was induced by applying uni-axial strain on graphene sheets. The creation of pentagonal and heptagonal rings in the graphitic backbone has resulted in a dramatic modification on electronic properties at the atomic level as a consequence of modifying bond lengths. Moreover, ripples start to show up in graphene with different types of Stone–Wales defects when the strain exceeds 4%. Equally important, the strain may be used to tune the graphene wrinkling as well as graphene electronic properties. Besides, ripples induced by mechanical strain have a great impact on the electronic properties of pristine graphene and graphene with different orientations of Stone–Wales defects. This novel observation might be used to control not only graphene’s electronic properties but also graphene structural functionality.
Keywords: graphene, Stone–Wales defects, uni-axial strain, rippling, electronic properties, density functional theory.
Received: 02.01.2021
Revised: 02.01.2021
Accepted: 04.03.2021
English version:
Semiconductors, 2021, Volume 55, Issue 8, Pages 643–653
DOI: https://doi.org/10.1134/S1063782621070198
Document Type: Article
Language: English
Citation: J. A. Talla, E. A. Almahmoud, K. Al-Khaza'leh, H. Abu-Farsakh, “Structural and electronic properties of rippled graphene with different orientations of Stone–Wales defects: first-principles study”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 585; Semiconductors, 55:8 (2021), 643–653
Citation in format AMSBIB
\Bibitem{TalAlmAl-21}
\by J.~A.~Talla, E.~A.~Almahmoud, K.~Al-Khaza'leh, H.~Abu-Farsakh
\paper Structural and electronic properties of rippled graphene with different orientations of Stone--Wales defects: first-principles study
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 7
\pages 585
\mathnet{http://mi.mathnet.ru/phts6618}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 8
\pages 643--653
\crossref{https://doi.org/10.1134/S1063782621070198}
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  • https://www.mathnet.ru/eng/phts/v55/i7/p585
  • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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