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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 1, Page 84 (Mi phts6589)  
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor physics

Effect of total ionizing dose damage on 8-transistor CMOS star sensor performance

J. Fengab, Y.-D. Liabc, J. Fucab, L. Wenabc, C.-F. Heabc, Q. Guoabc

a Xinjiang Technical Institute of Physics & Chemistry, Urumqi 830011, China
b Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
c University of Chinese Academy of Sciences, Beijing, China
Full-text PDF (28 kB) Citations (4)
Abstract: The effects of total ionizing dose (TID) radiation from $^{60}$Co gamma-rays on an 8-transistor global shutter exposure complementary metal-oxide semiconductor image sensor (CIS) within a star sensor is presented to analyze the sources of star sensor performance degradation and the decrease of attitude measurement accuracy. The dark current, dark signal non-uniformity, and photon response non-uniformity versus the TID are investigated. The signal-to-noise ratio, star diagonal distance accuracy, and star point centroid positioning accuracy of the star sensor versus the TID are also analyzed. By establishing the correlation between space radiation, CIS noise, and star sensor performance parameters, the transfer mechanism of CIS parameter degradation to star sensor parameter degradation is revealed.
Keywords: star sensor, 8-transistor CIS, total ionizing dose effect, performance degradation.
Funding agency Grant number
National Natural Science Foundation of China 11805269
West Light Foundation of the Chinese Academy of Sciences 2016-QNXZ-B-2
High level talent introduction project of the Autonomous Region [2017] 699
The work was supported by the National Natural Science Foundation of China under grant no. 11805269, the West Light Foundation of the Chinese Academy of Sciences under grant no. 2016-QNXZ-B-2 and High level talent introduction project of the Autonomous Region under grant no. [2017] 699.
Received: 28.07.2020
Revised: 28.07.2020
Accepted: 01.09.2020
English version:
Semiconductors, 2021, Volume 55, Issue 1, Pages 108–115
DOI: https://doi.org/10.1134/S1063782621010073
Document Type: Article
Language: English
Citation: J. Feng, Y.-D. Li, J. Fu, L. Wen, C.-F. He, Q. Guo, “Effect of total ionizing dose damage on 8-transistor CMOS star sensor performance”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 84; Semiconductors, 55:1 (2021), 108–115
Citation in format AMSBIB
\Bibitem{FenLiFu21}
\by J.~Feng, Y.-D.~Li, J.~Fu, L.~Wen, C.-F.~He, Q.~Guo
\paper Effect of total ionizing dose damage on 8-transistor CMOS star sensor performance
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 1
\pages 84
\mathnet{http://mi.mathnet.ru/phts6589}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 1
\pages 108--115
\crossref{https://doi.org/10.1134/S1063782621010073}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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