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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 1, Page 85 (Mi phts6588)  

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

Device performance optimization of organic thin-film transistors at short-channel lengths using vertical channel engineering techniques

F. Anaa, N. Dinb

a Department of Electronics and Communication Engineering, School of Engineering & Technology, Baba Ghulam Shah Badshah University, Rajouri, Jammu & Kashmir, 185234, India
b Department of Electronics and Communication Engineering, National Institute of Technology, Srinagar, 190006, India
Full-text PDF (30 kB) Citations (2)
Abstract: This paper presents a finite-element-based two-dimensional numerical simulation study of the vertical channel engineering approaches for controlling the short-channel effects (SCEs) in organic transistors based on thin-film transistor technology (OTFTs). The impact of gate-oxide thickness $T_{\mathrm{Ox}}$ scaling and usage of high-permittivity gate dielectric material has been analyzed for a bottom-contact organic thin-film transistors at channel length of 0.7 $\mu$m. The techniques have been used to investigate the impact on drain-induced barrier lowering (DIBL), sub-threshold slope, and $I_{\mathrm{On}}/I_{\mathrm{Off}}$ ratio. The results have shown a significant reduction in values of DIBL and sub-threshold slope in short-channel OTFTs when either of the channel engineering techniques are employed. A high $I_{\mathrm{On}}/I_{\mathrm{Off}}$ ratio of the order of $\sim$10$^7$ has been achieved using a high-permittivity gate-oxide material. It has been observed that using a high-permittivity gate dielectric material, a peak value of $I_{\mathrm{On}}/I_{\mathrm{Off}}$ ratio can be achieved for an equivalent oxide thickness of 5 nm. The results suggest that the desirable transistor performance can be achieved through proper selection of gate-oxide material and thickness.
Keywords: DIBL, high-$\kappa$ gate dielectric, leakage currents, sub-threshold.
Received: 16.08.2020
Revised: 16.08.2020
Accepted: 06.09.2020
English version:
Semiconductors, 2021, Volume 55, Issue 1, Pages 116–121
DOI: https://doi.org/10.1134/S1063782621010024
Document Type: Article
Language: English
Citation: F. Ana, N. Din, “Device performance optimization of organic thin-film transistors at short-channel lengths using vertical channel engineering techniques”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 85; Semiconductors, 55:1 (2021), 116–121
Citation in format AMSBIB
\Bibitem{AnaDin21}
\by F.~Ana, N.~Din
\paper Device performance optimization of organic thin-film transistors at short-channel lengths using vertical channel engineering techniques
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 1
\pages 85
\mathnet{http://mi.mathnet.ru/phts6588}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 1
\pages 116--121
\crossref{https://doi.org/10.1134/S1063782621010024}
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  • https://www.mathnet.ru/eng/phts/v55/i1/p85
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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