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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 1, Page 42
(Mi phts6586)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Simulation of carrier trapping in an embedded nanowire and its effect in the nano-EBIC technique
A. El Hdiya, M. Ledrabc a Equipe Thermique/Institut de Thermique, Mécanique, Matériaux (ITheMM), UFR SEN, Université de Reims Champagne–Ardenne, BP 1039, 51687, Reims cedex 2, France
b Centre Universitaire Abdelhafid BOUSSOUF-Mila,
BP 26, RP 43000, Mila, Algeria
c Laboratoire "LMSM", Université de Biskra,
BP. 145, R.P. 07000, Biskra, Algeria
Abstract:
Effect of an isolated Ge nanowire embedded in an $n$-doped Si on electron beam induced current is simulated by a Monte Carlo calculation algorithm. A circular nano-contact is used to collect the current generated by the use of primary energy of 5 or 10 keV in a perpendicular configuration along a line passing through the contact center. The nanowire, considered as a recombination center, is vertically positioned beneath the contact. Calculation takes into account various parameters such as a nano-scale depletion zone under the nano-contact, the depth of the nanowire, and its size. The surface recombination velocity is taken equal to zero. Competition between both carriers collected by the nano-contact and those captured by the nanowire is studied. Both processes are affected by the depth of the nanowire and by the primary energy. Moreover, the nanowire–Si contact behaves as a nano-scale hetero-junction, and hole storage in the nanowire leads to accentuation of energy band bending, especially in the longitudinal direction of the nanowire. Consequently, tunnel recombination would be present.
Keywords:
nanowire, nano-EBIC, Monte Carlo simulation, carrier trapping, carrier collection.
Received: 05.05.2020 Revised: 02.09.2020 Accepted: 12.09.2020
Citation:
A. El Hdiy, M. Ledra, “Simulation of carrier trapping in an embedded nanowire and its effect in the nano-EBIC technique”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 42; Semiconductors, 55:1 (2021), 56–60
Linking options:
https://www.mathnet.ru/eng/phts6586 https://www.mathnet.ru/eng/phts/v55/i1/p42
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