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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 6, Pages 513–517
DOI: https://doi.org/10.21883/FTP.2021.06.50919.9635
(Mi phts6581)
 

Micro- and nanocrystalline, porous, composite semiconductors

Origin of green coloration in AlN crystals grown on SiC seeds

S. S. Nagalyuk, E. N. Mokhov, O. P. Kazarova, B. Ya. Ber, A. A. Anisimov, I. D. Breev

Ioffe Institute, St. Petersburg
Abstract: The origns leading to the appearance of a green color of AlN crystals grown by sublimation on SiC seeds are investigated. It was shown by the method of secondary ion mass spectroscopy that the color of crystals weakly depends on the content of silicon and carbon, and a green or dark color appears only with an increased content of carbon in comparison with silicon. The presence of a separate amorphous carbon phase in these crystals was established by the method of Raman light scattering. The separation of the carbon phase in the process of crystal growth makes it difficult to obtain high-quality AlN crystals, as well as AlN-SiC solid solutions. The influence of growth conditions on the optical properties of AlN crystals is analyzed.
Keywords: AlN crystal, SiC seed, green or dark color, amorphous carbon.
Received: 19.02.2021
Revised: 25.02.2021
Accepted: 25.02.2021
English version:
Semiconductors, 2021, Volume 55, Issue 6, Pages 546–550
DOI: https://doi.org/10.1134/S1063782621060099
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. S. Nagalyuk, E. N. Mokhov, O. P. Kazarova, B. Ya. Ber, A. A. Anisimov, I. D. Breev, “Origin of green coloration in AlN crystals grown on SiC seeds”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 513–517; Semiconductors, 55:6 (2021), 546–550
Citation in format AMSBIB
\Bibitem{NagMokKaz21}
\by S.~S.~Nagalyuk, E.~N.~Mokhov, O.~P.~Kazarova, B.~Ya.~Ber, A.~A.~Anisimov, I.~D.~Breev
\paper Origin of green coloration in AlN crystals grown on SiC seeds
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 6
\pages 513--517
\mathnet{http://mi.mathnet.ru/phts6581}
\crossref{https://doi.org/10.21883/FTP.2021.06.50919.9635}
\elib{https://elibrary.ru/item.asp?id=46490245}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 6
\pages 546--550
\crossref{https://doi.org/10.1134/S1063782621060099}
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