Study of the current–voltage characteristics of InAsSb-based LED heterostructures in the 4.2–300 K temperature range

The results of a study in the temperature range 4.2–300 K of the current–voltage characteristics of light emitting diode (LED) heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs or InAsSb/InAsSbP quantum wells (QWs) are presented. The carrier-transport mechanisms depending on the temperature and heterostructure design are determined. It is shown that charge transport across the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunneling mechanism is observed. For an InAs/InAs/InAs$_{0.15}$Sb$_{0.31}$P$_{0.54}$ heterostructure, an additional carrier-transport channel is observed. It is shown that the presence of 108 InAs$_{0.88}$Sb$_{0.12}$/InAs QWs in the active region leads to an increase in leakage currents across the heterojunction in the whole temperature range, which is likely related to carrier tunneling.