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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 138–142
(Mi phts6575)
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This article is cited in 7 scientific papers (total in 7 papers)
Manufacturing, processing, testing of materials and structures
Formation of graphite/SiC structures by the thermal decomposition of silicon carbide
M. G. Mynbaevaab, A. A. Lavrent'eva, K. J. Mynbaevba a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
The conditions in which carbon layers are synthesized on the surface of silicon carbide (SiC) wafers by thermal decomposition are studied. The effect of temperature and composition of the gas atmosphere on the structural properties of the layers being synthesized is analyzed. The conditions in which continuous graphite films with both single-crystal and polycrystalline structure can be obtained are determined.
Received: 06.05.2015 Accepted: 18.05.2015
Citation:
M. G. Mynbaeva, A. A. Lavrent'ev, K. J. Mynbaev, “Formation of graphite/SiC structures by the thermal decomposition of silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 138–142; Semiconductors, 50:1 (2016), 138–142
Linking options:
https://www.mathnet.ru/eng/phts6575 https://www.mathnet.ru/eng/phts/v50/i1/p138
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Abstract page: | 69 | Full-text PDF : | 26 |
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