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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 67–82
(Mi phts6565)
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This article is cited in 40 scientific papers (total in 40 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Vertical heterostructures based on graphene and other 2D materials
I. V. Antonovaab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract:
Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.
Received: 01.04.2015 Accepted: 02.04.2015
Citation:
I. V. Antonova, “Vertical heterostructures based on graphene and other 2D materials”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 67–82; Semiconductors, 50:1 (2016), 66–82
Linking options:
https://www.mathnet.ru/eng/phts6565 https://www.mathnet.ru/eng/phts/v50/i1/p67
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Abstract page: | 53 | Full-text PDF : | 19 |
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