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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 55–59 (Mi phts6563)  
This article is cited in 1 scientific paper (total in 1 paper)

Surface, interfaces, thin films

Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing

R. K. Yafarov, V. Ya. Shanygin

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
Full-text PDF (155 kB) Citations (1)
Abstract: The morphological stability of atomically clean silicon (100) surface after low-energy microwave plasma-chemical etching in various plasma-forming media is studied. It is found that relaxation changes in the surface density and atomic bump heights after plasma processing in inert and chemically active media are multidirectional in character. After processing in a freon-14 medium, the free energy is minimized due to a decrease in the surface density of microbumps and an increase in their height. After argon-plasma processing, an insignificant increase in the bump density with a simultaneous decrease in bump heights is observed. The physicochemical processes causing these changes are considered.
Received: 26.03.2015
Accepted: 09.04.2015
English version:
Semiconductors, 2016, Volume 50, Issue 1, Pages 54–58
DOI: https://doi.org/10.1134/S106378261601022X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. K. Yafarov, V. Ya. Shanygin, “Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 55–59; Semiconductors, 50:1 (2016), 54–58
Citation in format AMSBIB
\Bibitem{YafSha16}
\by R.~K.~Yafarov, V.~Ya.~Shanygin
\paper Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 1
\pages 55--59
\mathnet{http://mi.mathnet.ru/phts6563}
\elib{https://elibrary.ru/item.asp?id=25668019}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 1
\pages 54--58
\crossref{https://doi.org/10.1134/S106378261601022X}
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  • https://www.mathnet.ru/eng/phts/v50/i1/p55
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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