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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 51–54
(Mi phts6562)
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This article is cited in 5 scientific papers (total in 5 papers)
Surface, interfaces, thin films
Optical properties of PbS thin films
O. R. Akhmedova, M. G. Huseynaliyeva, N. A. Abdullaevb, N. M. Abdullaevb, S. S. Babaevb, N. A. Kasumovb a National Academy of Azerbaijan, Nakhichevan Branch, Nakhichevan, Azerbaijan
b Abdullaev Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
Abstract:
The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be $E_1$ = 3.53 eV and $E_2$ = 4.57 eV. For both energy regions, the best fit is attained at the critical point 2D ($m$ = 0). In addition, the Raman spectra and the optical-absorption spectra of PbS thin films are studied. From the dependence of the quantity $(\alpha h\nu)^{2}$ on the photon energy $h\nu$, the band gap is established at $E_g$ = 0.37 eV.
Received: 17.03.2015 Accepted: 26.03.2015
Citation:
O. R. Akhmedov, M. G. Huseynaliyev, N. A. Abdullaev, N. M. Abdullaev, S. S. Babaev, N. A. Kasumov, “Optical properties of PbS thin films”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 51–54; Semiconductors, 50:1 (2016), 50–53
Linking options:
https://www.mathnet.ru/eng/phts6562 https://www.mathnet.ru/eng/phts/v50/i1/p51
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