On the preparation and photoelectric properties of Tl$_{1-x}$In$_{1-x}$Sn$_{x}$Se$_{2}$ ($x$ = 0.1–0.25) alloys

The technological conditions for growing single crystals of Tl$_{1-x}$In$_{1-x}$Sn$_{x}$Se$_{2}$ ($x$ = 0.1–0.25) alloys are developed. The spectral distribution of the photoconductivity of the grown crystals at $T$ = 300 K and thermally stimulated conductivity are studied. The effect of In$^{3+}$ cation substitution with Sn$^{4+}$ in Tl$_{1-x}$In$_{1-x}$Sn$_{x}$Se$_{2}$ ($x$ = 0.1–0.25) alloys on their photoelectric properties is shown.