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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 167–170 (Mi phts6532)  

This article is cited in 6 scientific papers (total in 6 papers)

Surface, interfaces, thin films

Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy

A. V. Dunaev, D. B. Murin, S. A. Pivovarenok

Ivanovo State University of Chemistry and Technology
Full-text PDF (659 kB) Citations (6)
Abstract: The quality of the surface of a semiconductor structure after plasma-chemical etching in plasma of HCl/Ar, HCl/Cl$_{2}$, HCl/H$_{2}$ mixtures, and freon R12 plasma is studied. It is shown that the optimal combination of the etch rate and surface roughness is achieved in the hydrogen chloride and argon mixture. In mixtures with hydrogen, the etch rates are too low for high surface quality; in mixtures with chlorine, the surface roughness exceeds technologically acceptable values due to high etch rates. The high-frequency discharge in freon R12 can be effectively used to etch semiconductors, providing technologically acceptable interaction rates, while retaining a uniform and clean surface.
Keywords: GaAs, Etch Rate, GaAs Surface, Glow Discharge Plasma, High Surface Quality.
Received: 21.04.2015
Accepted: 30.04.2015
English version:
Semiconductors, 2016, Volume 50, Issue 2, Pages 167–170
DOI: https://doi.org/10.1134/S106378261602007X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Dunaev, D. B. Murin, S. A. Pivovarenok, “Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 167–170; Semiconductors, 50:2 (2016), 167–170
Citation in format AMSBIB
\Bibitem{DunMurPiv16}
\by A.~V.~Dunaev, D.~B.~Murin, S.~A.~Pivovarenok
\paper Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 2
\pages 167--170
\mathnet{http://mi.mathnet.ru/phts6532}
\elib{https://elibrary.ru/item.asp?id=25668077}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 2
\pages 167--170
\crossref{https://doi.org/10.1134/S106378261602007X}
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  • https://www.mathnet.ru/eng/phts/v50/i2/p167
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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