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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3, Pages 377–381
(Mi phts6519)
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This article is cited in 12 scientific papers (total in 12 papers)
Micro- and nanocrystalline, porous, composite semiconductors
Influence of the surface layer on the electrochemical deposition of metals and semiconductors into mesoporous silicon
E. B. Chubenko, S. V. Red'ko, A. I. Sherstnyov, В. А. Петрович, D. A. Kotov, V. P. Bondarenko Belarussian State University of Computer Science and Radioelectronic Engineering
Abstract:
The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.
Keywords:
Zinc Oxide, Scanning Electron Microscopy Micrographs, Porous Silicon, Porous Layer, Electrochemical Deposition.
Received: 28.05.2015 Accepted: 14.07.2015
Citation:
E. B. Chubenko, S. V. Red'ko, A. I. Sherstnyov, В. А. Петрович, D. A. Kotov, V. P. Bondarenko, “Influence of the surface layer on the electrochemical deposition of metals and semiconductors into mesoporous silicon”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 377–381; Semiconductors, 50:3 (2016), 372–376
Linking options:
https://www.mathnet.ru/eng/phts6519 https://www.mathnet.ru/eng/phts/v50/i3/p377
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Abstract page: | 39 | Full-text PDF : | 15 |
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