Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3, Pages 354–356 (Mi phts6516)  
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Two stages of surface-defect formation in a MOS structure under low-dose rate $\gamma$ irradiation

V. D. Popov

National Engineering Physics Institute "MEPhI", Moscow
Full-text PDF (155 kB) Citations (4)
Abstract: The results of an experimental study of how surface defects are formed at the Si–SiO$_2$ interface at $\gamma$-radiation dose rates of $P$ = 0.1 and 1.0 rad/s are reported. It is found that the surface defects are formed in two stages. The defect-formation mechanisms are analyzed.
Keywords: Dose Rate, Surface Defect, Exponential Dependence, Gate Oxide, Threshold Time.
Received: 11.06.2015
Accepted: 17.06.2015
English version:
Semiconductors, 2016, Volume 50, Issue 3, Pages 349–351
DOI: https://doi.org/10.1134/S1063782616030209
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. D. Popov, “Two stages of surface-defect formation in a MOS structure under low-dose rate $\gamma$ irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 354–356; Semiconductors, 50:3 (2016), 349–351
Citation in format AMSBIB
\Bibitem{Pop16}
\by V.~D.~Popov
\paper Two stages of surface-defect formation in a MOS structure under low-dose rate $\gamma$ irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 3
\pages 354--356
\mathnet{http://mi.mathnet.ru/phts6516}
\elib{https://elibrary.ru/item.asp?id=25668179}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 3
\pages 349--351
\crossref{https://doi.org/10.1134/S1063782616030209}
Linking options:
  • https://www.mathnet.ru/eng/phts6516
  • https://www.mathnet.ru/eng/phts/v50/i3/p354
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:42
    Full-text PDF :15
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024