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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 485–488 (Mi phts6490)  

Semiconductor structures, low-dimensional systems, quantum phenomena

Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire

Haddou El Ghaziab, Anouar Joriob

a Specials Mathematics, CPGE My Youssef, Rabat, Morocco
b LPS, Faculty of sciences, Dhar EL Mehrez, B.P 1796 Atlas Fes, Morocco
Abstract: Externally applied electric field and effective radius effects are investigated on the lowest excited-state shallow-donor binding energy in (In,Ga)N-GaN parabolic wire within the framework of single band effective-mass approximation. The calculations are performed using the finite-difference method within the quasi-one-dimensional effective potential model. Our results reveal that: (i) the probability density is the largest on a circularity whose radius is the effective radius, (ii) the lowest excited-state binding energy is the largest for impurity located on this circularity while it starts to decrease when the impurity is away from the circularity and (iii) the binding energy is strongly-dependent on the complex interplay of spatial confinement, coulomb interaction and applied electric field.
Keywords: Binding Energy, Effective Radius, Electric Field Effect, Lateral Confinement, Spatial Confinement.
Received: 25.02.2015
Accepted: 03.03.2015
English version:
Semiconductors, 2016, Volume 50, Issue 4, Pages 478–481
DOI: https://doi.org/10.1134/S1063782616040102
Bibliographic databases:
Document Type: Article
Language: English
Citation: Haddou El Ghazi, Anouar Jorio, “Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 485–488; Semiconductors, 50:4 (2016), 478–481
Citation in format AMSBIB
\Bibitem{El Jor16}
\by Haddou~El Ghazi, Anouar~Jorio
\paper Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 4
\pages 485--488
\mathnet{http://mi.mathnet.ru/phts6490}
\elib{https://elibrary.ru/item.asp?id=25668254}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 4
\pages 478--481
\crossref{https://doi.org/10.1134/S1063782616040102}
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