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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 441–446 (Mi phts6482)  

This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment

V. R. Nikitenko, M. M. Amrakulov, M. D. Khan

National Engineering Physics Institute "MEPhI", Moscow
Full-text PDF (309 kB) Citations (2)
Abstract: Analytical solutions for the transient current in the СELIV (Charge Extraction by Linearly Increasing Voltage) experiment are found in both the quasi-equilibrium (taking into account field-enhanced diffusion) and dispersive transport modes. The ratio of the time of current passage through the maximum to the transit time significantly decreases with increasing disorder. Simple analytical expressions for this ratio, containing only one dimensionless parameter characterizing the given material in each case, are obtained. The conditions of applicability of the known CELIV theory (without diffusion) are determined. The result allows calculations of the transit time in the case where the transient-current signal is sharply asymmetric and slowly decreases over long times.
Keywords: Transit Time, Transport Mode, Transient Current, Anomalous Diffusion, Field Diffusion.
Received: 16.07.2015
Accepted: 21.09.2015
English version:
Semiconductors, 2016, Volume 50, Issue 4, Pages 435–439
DOI: https://doi.org/10.1134/S1063782616040187
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. R. Nikitenko, M. M. Amrakulov, M. D. Khan, “Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 441–446; Semiconductors, 50:4 (2016), 435–439
Citation in format AMSBIB
\Bibitem{NikAmrKha16}
\by V.~R.~Nikitenko, M.~M.~Amrakulov, M.~D.~Khan
\paper Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 4
\pages 441--446
\mathnet{http://mi.mathnet.ru/phts6482}
\elib{https://elibrary.ru/item.asp?id=25668230}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 4
\pages 435--439
\crossref{https://doi.org/10.1134/S1063782616040187}
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  • https://www.mathnet.ru/eng/phts/v50/i4/p441
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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