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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 433–437
(Mi phts6480)
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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Electronic structure of Pt-substituted clathrate silicides Ba$_{8}$Pt$_{x}$Si$_{46-x}$ ($x$ = 4–6)
N. A. Borshch Voronezh State Technical University
Abstract:
The results of calculation of the electronic structure of Si-based Pt-substituted clathrates are reported. Calculation is carried out by the linearized-augmented-plane-wave method. The effect of the number of substitutions and their crystallographic position in the unit cell on the electron-energy spectrum and the electronic properties of Pt-substituted clathrates is analyzed.
Keywords:
Valence Band, Fermi Level, Clathrate, Valence Configuration, Silicon Clathrate.
Received: 14.09.2015 Accepted: 21.09.2015
Citation:
N. A. Borshch, “Electronic structure of Pt-substituted clathrate silicides Ba$_{8}$Pt$_{x}$Si$_{46-x}$ ($x$ = 4–6)”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 433–437; Semiconductors, 50:4 (2016), 427–431
Linking options:
https://www.mathnet.ru/eng/phts6480 https://www.mathnet.ru/eng/phts/v50/i4/p433
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