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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 700–705
(Mi phts6476)
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This article is cited in 1 scientific paper (total in 1 paper)
Manufacturing, processing, testing of materials and structures
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
V. I. Kozlovskyab, V. S. Krivobokab, P. I. Kuznetsovc, S. N. Nikolaeva, E. E. Onishchenkoa, A. A. Pruchkinaa, A. G. Temiryazevc, V. P. Martovitskiia a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b National Engineering Physics Institute "MEPhI", Moscow
c Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Abstract:
Strained epitaxial ZnSe layers are grown on GaAs substrates by the method of vapor-phase epitaxy from metal-organic compounds. It is found that Se nanoislands with a density of 10$^8$ to 10$^9$ cm$^{-2}$ are formed at the surface of such layers. It is established that an increase in the size of Se islands and a decrease in their density take place after completion of growth. Annealing in a H$_2$ atmosphere at a temperature higher than 260$^\circ$C leads to the disappearance of Se islands and to a decrease in the surface roughness. It is shown that annealing does not lead to deterioration of the structural perfection of the epitaxial ZnSe films; rather, annealing gives rise to a decrease in the intensity of impurity–defect luminescence and to an increase in the intensity of intrinsic radiation near the bottom of the exciton band.
Keywords:
ZnSe, Epitaxial Layer, GaAs Substrate, Hydrogen Atmosphere, Free Exciton.
Received: 06.10.2015 Accepted: 16.10.2015
Citation:
V. I. Kozlovsky, V. S. Krivobok, P. I. Kuznetsov, S. N. Nikolaev, E. E. Onishchenko, A. A. Pruchkina, A. G. Temiryazev, V. P. Martovitskii, “Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 700–705; Semiconductors, 50:5 (2016), 688–693
Linking options:
https://www.mathnet.ru/eng/phts6476 https://www.mathnet.ru/eng/phts/v50/i5/p700
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