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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 596–599 (Mi phts6457)  
Spectroscopy, interaction with radiation

Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate

V. Ya. Aleshkinab, A. A. Dubinovab, K. E. Kudryavtsevab, P. A. Yuninab, M. N. Drozdovab, O. V. Vikhrovac, S. M. Nekorkinc, B. N. Zvonkovc

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (753 kB)
Abstract: The structural and optical properties of a metamorphic GaAsSb bulk layer grown on a GaAs substrate are studied. As the excitation power density (at a wavelength of 0.65 $\mu$m) reaches 9 kW cm$^{-2}$ at liquid-nitrogen temperature and 230 kW cm$^{-2}$ at room temperature, a superluminescence signal is observed at wave-lengths of 0.943 and 0.992 $\mu$m, respectively.
Keywords: GaAs, GaSb, GaAs Substrate, Waveguide Layer, Stimulate Emission.
Received: 27.10.2015
Accepted: 03.11.2015
English version:
Semiconductors, 2016, Volume 50, Issue 5, Pages 586–589
DOI: https://doi.org/10.1134/S106378261605002X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, P. A. Yunin, M. N. Drozdov, O. V. Vikhrova, S. M. Nekorkin, B. N. Zvonkov, “Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 596–599; Semiconductors, 50:5 (2016), 586–589
Citation in format AMSBIB
\Bibitem{AleDubKud16}
\by V.~Ya.~Aleshkin, A.~A.~Dubinov, K.~E.~Kudryavtsev, P.~A.~Yunin, M.~N.~Drozdov, O.~V.~Vikhrova, S.~M.~Nekorkin, B.~N.~Zvonkov
\paper Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 5
\pages 596--599
\mathnet{http://mi.mathnet.ru/phts6457}
\elib{https://elibrary.ru/item.asp?id=27368879}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 5
\pages 586--589
\crossref{https://doi.org/10.1134/S106378261605002X}
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