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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 596–599
(Mi phts6457)
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Spectroscopy, interaction with radiation
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
V. Ya. Aleshkinab, A. A. Dubinovab, K. E. Kudryavtsevab, P. A. Yuninab, M. N. Drozdovab, O. V. Vikhrovac, S. M. Nekorkinc, B. N. Zvonkovc a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
The structural and optical properties of a metamorphic GaAsSb bulk layer grown on a GaAs substrate are studied. As the excitation power density (at a wavelength of 0.65 $\mu$m) reaches 9 kW cm$^{-2}$ at liquid-nitrogen temperature and 230 kW cm$^{-2}$ at room temperature, a superluminescence signal is observed at wave-lengths of 0.943 and 0.992 $\mu$m, respectively.
Keywords:
GaAs, GaSb, GaAs Substrate, Waveguide Layer, Stimulate Emission.
Received: 27.10.2015 Accepted: 03.11.2015
Citation:
V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, P. A. Yunin, M. N. Drozdov, O. V. Vikhrova, S. M. Nekorkin, B. N. Zvonkov, “Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 596–599; Semiconductors, 50:5 (2016), 586–589
Linking options:
https://www.mathnet.ru/eng/phts6457 https://www.mathnet.ru/eng/phts/v50/i5/p596
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