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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 582–588
(Mi phts6455)
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This article is cited in 2 scientific papers (total in 2 papers)
Electronic properties of semiconductors
Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals
V. V. Sobolev, D. A. Perevoshchikov Udmurt State University, Izhevsk
Abstract:
The localization of the transitions in the bulk of the Brillouin zone that form the main structures in the spectra of the imaginary part of the permittivity in the range up to $\sim$7 eV for III–V semiconductors (AlSb, GaSb, InSb, and InAs) is determined using electron density functional theory. It is established that intense transitions occur not only in the vicinity of the high-symmetry axes of the Brillouin zone, but also in some specific large volumes of the irreducible part of the Brillouin zone.
Keywords:
InSb, Brillouin Zone, GaSb, Interband Transition, AlSb.
Received: 17.09.2015 Accepted: 14.10.2015
Citation:
V. V. Sobolev, D. A. Perevoshchikov, “Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 582–588
Linking options:
https://www.mathnet.ru/eng/phts6455 https://www.mathnet.ru/eng/phts/v50/i5/p582
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Abstract page: | 49 | Full-text PDF : | 9 |
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