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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 6, Pages 848–853 (Mi phts6451)  
This article is cited in 3 scientific papers (total in 3 papers)

Manufacturing, processing, testing of materials and structures

On the photon annealing of silicon-implanted gallium-nitride layers

B. I. Selezneva, G. Ya. Moskalevb, D. G. Fedorovab

a Yaroslav-the-Wise Novgorod State University
b JSC OKB-Planeta, Velikii Novgorod
Full-text PDF (577 kB) Citations (3)
Abstract: The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.
Received: 16.11.2015
Accepted: 18.11.2015
English version:
Semiconductors, 2016, Volume 50, Issue 6, Pages 832–838
DOI: https://doi.org/10.1134/S1063782616060221
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. I. Seleznev, G. Ya. Moskalev, D. G. Fedorov, “On the photon annealing of silicon-implanted gallium-nitride layers”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 848–853; Semiconductors, 50:6 (2016), 832–838
Citation in format AMSBIB
\Bibitem{SelMosFed16}
\by B.~I.~Seleznev, G.~Ya.~Moskalev, D.~G.~Fedorov
\paper On the photon annealing of silicon-implanted gallium-nitride layers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 6
\pages 848--853
\mathnet{http://mi.mathnet.ru/phts6451}
\elib{https://elibrary.ru/item.asp?id=27368924}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 6
\pages 832--838
\crossref{https://doi.org/10.1134/S1063782616060221}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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