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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 6, Pages 848–853
(Mi phts6451)
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This article is cited in 3 scientific papers (total in 3 papers)
Manufacturing, processing, testing of materials and structures
On the photon annealing of silicon-implanted gallium-nitride layers
B. I. Selezneva, G. Ya. Moskalevb, D. G. Fedorovab a Yaroslav-the-Wise Novgorod State University
b JSC OKB-Planeta, Velikii Novgorod
Abstract:
The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.
Received: 16.11.2015 Accepted: 18.11.2015
Citation:
B. I. Seleznev, G. Ya. Moskalev, D. G. Fedorov, “On the photon annealing of silicon-implanted gallium-nitride layers”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 848–853; Semiconductors, 50:6 (2016), 832–838
Linking options:
https://www.mathnet.ru/eng/phts6451 https://www.mathnet.ru/eng/phts/v50/i6/p848
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Abstract page: | 24 | Full-text PDF : | 18 |
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