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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 6, Pages 839–842 (Mi phts6449)  
Semiconductor physics

Method for increasing the carrier mobility in the channel of the 4$H$-SiC MOSFET

A. I. Mikhaylova, A. V. Afanasyeva, V. A. Ilyina, V. V. Luchinina, S. A. Reshanovb, A. Schönerb

a Saint Petersburg Electrotechnical University "LETI"
b Ascatron AB, Kista, Sweden
Full-text PDF (236 kB)
Abstract: A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4$H$ polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-dioxide layer. Together with increasing carrier mobility, the average breakdown field strength decreases as compared with the gate insulator thermally grown in an atmosphere of N$_2$O.
Received: 03.12.2015
Accepted: 08.12.2015
English version:
Semiconductors, 2016, Volume 50, Issue 6, Pages 824–827
DOI: https://doi.org/10.1134/S1063782616060178
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, A. Schöner, “Method for increasing the carrier mobility in the channel of the 4$H$-SiC MOSFET”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 839–842; Semiconductors, 50:6 (2016), 824–827
Citation in format AMSBIB
\Bibitem{MikAfaIly16}
\by A.~I.~Mikhaylov, A.~V.~Afanasyev, V.~A.~Ilyin, V.~V.~Luchinin, S.~A.~Reshanov, A.~Sch\"oner
\paper Method for increasing the carrier mobility in the channel of the 4$H$-SiC MOSFET
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 6
\pages 839--842
\mathnet{http://mi.mathnet.ru/phts6449}
\elib{https://elibrary.ru/item.asp?id=27368922}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 6
\pages 824--827
\crossref{https://doi.org/10.1134/S1063782616060178}
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