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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 6, Pages 825–829
(Mi phts6446)
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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes
S. A. Zuev, G. V. Kilessa, E. E. Asanov, V. V. Starostenko, S. V. Pokrova V. I. Vernadsky Crimean Federal University, Simferopol
Abstract:
The dependences of the electrical characteristics of thin-film structures with Schottky barrier on gallium arsenide are studied using Monte Carlo numerical simulation in the kinetic approximation with the main scattering mechanisms taken into account. The dependences of the diode conductivity on the voltage and channel thickness are obtained. It is shown that the relation between the diode voltage and conductivity changes at a small channel thickness, which is explained by barrier field expulsion to the substrate.
Received: 10.11.2015 Accepted: 10.11.2015
Citation:
S. A. Zuev, G. V. Kilessa, E. E. Asanov, V. V. Starostenko, S. V. Pokrova, “Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 825–829; Semiconductors, 50:6 (2016), 810–814
Linking options:
https://www.mathnet.ru/eng/phts6446 https://www.mathnet.ru/eng/phts/v50/i6/p825
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Abstract page: | 30 | Full-text PDF : | 21 |
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