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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 6, Pages 735–737 (Mi phts6432)  

This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

Anomalous thermoelectric power in Hg$_{3}$In$_{2}$Te$_{6}$ crystals

O. G. Grushka

Chernivtsi National University named after Yuriy Fedkovych
Full-text PDF (105 kB) Citations (2)
Abstract: Based on data on the Hall coefficient, it is shown that the existence of potential barriers in the region of impurity conductivity of highly compensated Hg$_{3}$In$_{2}$Te$_{6}$ crystals is possible. The role of barriers in the anomalous behavior of transport phenomena is discussed qualitatively. Extremely large values of the thermoelectric power are related to the combination of thermoelectric powers of contact potentials for regions with different concentrations of electrons.
Received: 03.11.2015
Accepted: 18.11.2015
English version:
Semiconductors, 2016, Volume 50, Issue 6
DOI: https://doi.org/10.1134/S1063782616060075
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. G. Grushka, “Anomalous thermoelectric power in Hg$_{3}$In$_{2}$Te$_{6}$ crystals”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 735–737
Citation in format AMSBIB
\Bibitem{Gru16}
\by O.~G.~Grushka
\paper Anomalous thermoelectric power in Hg$_{3}$In$_{2}$Te$_{6}$ crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 6
\pages 735--737
\mathnet{http://mi.mathnet.ru/phts6432}
\elib{https://elibrary.ru/item.asp?id=27368905}
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  • https://www.mathnet.ru/eng/phts/v50/i6/p735
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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