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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 6, Pages 735–737
(Mi phts6432)
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This article is cited in 2 scientific papers (total in 2 papers)
Electronic properties of semiconductors
Anomalous thermoelectric power in Hg$_{3}$In$_{2}$Te$_{6}$ crystals
O. G. Grushka Chernivtsi National University named after Yuriy Fedkovych
Abstract:
Based on data on the Hall coefficient, it is shown that the existence of potential barriers in the region of impurity conductivity of highly compensated Hg$_{3}$In$_{2}$Te$_{6}$ crystals is possible. The role of barriers in the anomalous behavior of transport phenomena is discussed qualitatively. Extremely large values of the thermoelectric power are related to the combination of thermoelectric powers of contact potentials for regions with different concentrations of electrons.
Received: 03.11.2015 Accepted: 18.11.2015
Citation:
O. G. Grushka, “Anomalous thermoelectric power in Hg$_{3}$In$_{2}$Te$_{6}$ crystals”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 735–737
Linking options:
https://www.mathnet.ru/eng/phts6432 https://www.mathnet.ru/eng/phts/v50/i6/p735
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Statistics & downloads: |
Abstract page: | 34 | Full-text PDF : | 14 |
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