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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 7, Pages 869–876
(Mi phts6405)
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Non-electronic properties of semiconductors (atomic structure, diffusion)
Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
P. V. Seredina, A. V. Fedyukina, I. N. Arsent'evb, L. S. Vavilovab, I. S. Tarasovb, Tatiana Prutskijc, Harald Leisted, Monika Rinked a Voronezh State University
b Ioffe Institute, St. Petersburg
c Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Mexico
d Karlsruhe Nano Micro Facility, Germany
Abstract:
The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin ($\sim$20–40 $\mu$m) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.
Received: 29.12.2015 Accepted: 11.01.2016
Citation:
P. V. Seredin, A. V. Fedyukin, I. N. Arsent'ev, L. S. Vavilova, I. S. Tarasov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 869–876; Semiconductors, 50:7 (2016), 853–859
Linking options:
https://www.mathnet.ru/eng/phts6405 https://www.mathnet.ru/eng/phts/v50/i7/p869
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Abstract page: | 34 | Full-text PDF : | 26 |
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