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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 8, Pages 1128–1132 (Mi phts6399)  
This article is cited in 1 scientific paper (total in 1 paper)

Manufacturing, processing, testing of materials and structures

Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation

P. A. Aleksandrov, E. K. Baranova, V. V. Budaragin

National Research Centre "Kurchatov Institute", Moscow
Full-text PDF (209 kB) Citations (1)
Abstract: We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.
Received: 23.12.2015
Accepted: 11.01.2016
English version:
Semiconductors, 2016, Volume 50, Issue 8, Pages 1107–1111
DOI: https://doi.org/10.1134/S1063782616080054
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Aleksandrov, E. K. Baranova, V. V. Budaragin, “Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1128–1132; Semiconductors, 50:8 (2016), 1107–1111
Citation in format AMSBIB
\Bibitem{AleBarBud16}
\by P.~A.~Aleksandrov, E.~K.~Baranova, V.~V.~Budaragin
\paper Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 8
\pages 1128--1132
\mathnet{http://mi.mathnet.ru/phts6399}
\elib{https://elibrary.ru/item.asp?id=27368974}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 8
\pages 1107--1111
\crossref{https://doi.org/10.1134/S1063782616080054}
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  • https://www.mathnet.ru/eng/phts/v50/i8/p1128
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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