Heterojunction low-barrier GаAs diodes with an improved reverse I–V characteristic

A modified semiconductor epitaxial heterostructure of a low-barrier diode, which would make it possible to substantially reduce the reverse-current density of the diode without deterioration of its other key parameters, is proposed and implemented. Improvement in the parameters of the reverse branch of the I–V characteristic is attained due to the introduction of heterojunctions into a homostructure making it possible to form a potential barrier in the semiconductor bulk, which is close to the optimal. The results of theoretical calculations using TCAD Synopsys and also the experimental I–V characteristics of diodes fabricated on the basis of homo- and heterostructures are presented. A considerable decrease in the reverse current is shown by the example of diodes with a barrier height of 0.2 and 0.17 V.