|
Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 8, Pages 1118–1122
(Mi phts6397)
|
|
|
|
This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact
A. V. Babichevabc, H. Zhangd, N. Guand, A. Yu. Egorovb, F. H. Juliend, A. Messanviedf, C. Durandef, J. Eymeryef, M. Tchernychevad a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
d Institut d’Electronique Fondamentale, University Paris Saclay, Orsay Cedex, France
e University Grenoble Alpes, Grenoble, France
f CEA, INAC-SP2M, "Nanophysique et Semiconducteurs" Group, Grenoble, France
Abstract:
We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single $p$–$n$ junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In$_{0.18}$Ga$_{0.82}$N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximal photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.
Received: 10.02.2016 Accepted: 15.02.2016
Citation:
A. V. Babichev, H. Zhang, N. Guan, A. Yu. Egorov, F. H. Julien, A. Messanvi, C. Durand, J. Eymery, M. Tchernycheva, “Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1118–1122; Semiconductors, 50:8 (2016), 1097–1101
Linking options:
https://www.mathnet.ru/eng/phts6397 https://www.mathnet.ru/eng/phts/v50/i8/p1118
|
Statistics & downloads: |
Abstract page: | 39 | Full-text PDF : | 12 |
|