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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 8, Pages 1100–1105
(Mi phts6394)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor physics
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer
V. A. Sergeev, A. M. Hodakov Ul'yanovsk Branch of Institute of Radioengineering and Electronics, Russian Academy of Sciences
Abstract:
The non-stationary thermoelectric model of the axisymmetric heterostructure of a light-emitting device is considered taking into account positive feedback mechanisms and the effect of the current-spreading-layer resistance. Taking into account the current localization effect, the nonuniform distribution of the heterojunction current density over the heterostructure area is determined. The non-stationary thermal conductivity equation with temperature-dependent current density flowing into the heterojunction is solved by the numerical–analytical iterative method. Based on the developed model, the current density, temperature, and thermomechanical stress distributions for the heterojunction plane are determined.
Received: 03.03.2015 Accepted: 27.11.2015
Citation:
V. A. Sergeev, A. M. Hodakov, “Dynamic thermoelectric model of a light-emitting structure with a current spreading layer”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1100–1105; Semiconductors, 50:8 (2016), 1079–1084
Linking options:
https://www.mathnet.ru/eng/phts6394 https://www.mathnet.ru/eng/phts/v50/i8/p1100
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Abstract page: | 35 | Full-text PDF : | 17 |
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