Prompt quality monitoring of InSe and GaSe semiconductor crystals by the nuclear quadrupole resonance technique

To determine the quality of layer-structured semiconductor single crystals, the nuclear quadrupole resonance technique with successive scanning of the entire sample volume and assessment of the structural quality on the basis of the observed spectra is used. The proposed method is appropriate in the case of InSe, GaSe and GaAs ingots grown in evacuated cells by the Bridgman technique and can be used repeatedly in subsequent technological procedures with no operator access to the material. To provide scanning within a limited region of the sample and to ensure efficient interaction of the high-frequency field with the crystal, excitation and detection of the nuclear-spin-induction signal is implemented by the saddle-shaped transceiver coil of the nuclear quadrupole resonance spectrometer.