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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1238–1241
(Mi phts6368)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor physics
On methods of determining the band gap of semiconductor structures with $p$–$n$ junctions
I. M. Vikulin, B. V. Korobitsyn, S. K. Kriskiv Ukrainian State Academy of Telecommunications, Odessa, Ukraine
Abstract:
The possibility of determining the band gap of homogeneous $p$–$n$ structures from the properties of the current–voltage characteristics at two temperatures (room temperature and temperatures 30 to 50$^\circ$C higher) is shown. A working formula for the calculation is derived, and practical application of the formula in determining the band gap is illustrated by the example of $p$–$n$ structures based on silicon, gallium arsenide, and gallium phosphide. The results are in agreement with commonly accepted data with an accuracy of 1%. In addition, the possibility of determining the band gap of homogeneous $p$–$n$ structures from the capacitance–voltage characteristics recorded at the above-indicated temperatures is shown.
Received: 26.11.2015 Accepted: 08.02.2016
Citation:
I. M. Vikulin, B. V. Korobitsyn, S. K. Kriskiv, “On methods of determining the band gap of semiconductor structures with $p$–$n$ junctions”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1238–1241; Semiconductors, 50:9 (2016), 1216–1219
Linking options:
https://www.mathnet.ru/eng/phts6368 https://www.mathnet.ru/eng/phts/v50/i9/p1238
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Abstract page: | 42 | Full-text PDF : | 29 |
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