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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1163–1166
(Mi phts6355)
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This article is cited in 4 scientific papers (total in 4 papers)
Electronic properties of semiconductors
Electrical parameters of polycrystalline Sm$_{1-x}$Eu$_{x}$S rare-earth semiconductors
V. V. Kaminskii, M. M. Kazanin, M. V. Romanova, G. A. Kamenskaja, N. V. Sharenkova Ioffe Institute, St. Petersburg
Abstract:
The electrical parameters of polycrystalline Sm$_{1-x}$Eu$_{x}$S compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity $x$. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of $T$ = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.
Received: 19.02.2016 Accepted: 26.02.2016
Citation:
V. V. Kaminskii, M. M. Kazanin, M. V. Romanova, G. A. Kamenskaja, N. V. Sharenkova, “Electrical parameters of polycrystalline Sm$_{1-x}$Eu$_{x}$S rare-earth semiconductors”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1163–1166; Semiconductors, 50:9 (2016), 1141–1144
Linking options:
https://www.mathnet.ru/eng/phts6355 https://www.mathnet.ru/eng/phts/v50/i9/p1163
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