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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1163–1166 (Mi phts6355)  

This article is cited in 4 scientific papers (total in 4 papers)

Electronic properties of semiconductors

Electrical parameters of polycrystalline Sm$_{1-x}$Eu$_{x}$S rare-earth semiconductors

V. V. Kaminskii, M. M. Kazanin, M. V. Romanova, G. A. Kamenskaja, N. V. Sharenkova

Ioffe Institute, St. Petersburg
Full-text PDF (132 kB) Citations (4)
Abstract: The electrical parameters of polycrystalline Sm$_{1-x}$Eu$_{x}$S compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity $x$. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of $T$ = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.
Received: 19.02.2016
Accepted: 26.02.2016
English version:
Semiconductors, 2016, Volume 50, Issue 9, Pages 1141–1144
DOI: https://doi.org/10.1134/S1063782616090116
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Kaminskii, M. M. Kazanin, M. V. Romanova, G. A. Kamenskaja, N. V. Sharenkova, “Electrical parameters of polycrystalline Sm$_{1-x}$Eu$_{x}$S rare-earth semiconductors”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1163–1166; Semiconductors, 50:9 (2016), 1141–1144
Citation in format AMSBIB
\Bibitem{KamKazRom16}
\by V.~V.~Kaminskii, M.~M.~Kazanin, M.~V.~Romanova, G.~A.~Kamenskaja, N.~V.~Sharenkova
\paper Electrical parameters of polycrystalline Sm$_{1-x}$Eu$_{x}$S rare-earth semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 9
\pages 1163--1166
\mathnet{http://mi.mathnet.ru/phts6355}
\elib{https://elibrary.ru/item.asp?id=27368981}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 9
\pages 1141--1144
\crossref{https://doi.org/10.1134/S1063782616090116}
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  • https://www.mathnet.ru/eng/phts/v50/i9/p1163
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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